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| ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * * * * * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXM62P02E6TA ZXM62P02E6TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL Top View 3000 units 10000 units DEVICE MARKING * 2P02 ISSUE 1 - JUNE 2004 1 ZXM62P02E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=-4.5V; T A=25C)(b) (V GS=-4.5V; T A=70C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25C (a) Linear Derating Factor Power Dissipation at T A=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT -20 12 -2.3 -1.7 -13 -1.9 -13 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JUNE 2004 2 ZXM62P02E6 CHARACTERISTICS 100 Refer Note (a) Max Power Dissipation (Watts) 2 -ID - Drain Current (A) 1.5 Refer Note (b) 10 1 Refer Note (a) 1 0.1 DC 1s 100ms 10ms 1ms 100s 0.5 0.1 1 10 100 0 0 20 40 60 80 100 120 140 160 -VDS - Drain-Source Voltage (V) T - Temperature ( ) Safe Operating Area Derating Curve 80 120 Thermal Resistance (C/W) Thermal Resistance (C/W) Refer Note (b) Refer Note (a) 100 80 60 40 D=0.2 D=0.5 60 40 D=0.5 20 D=0.2 D=0.1 D=0.05 20 D=0.1 D=0.05 Single Pulse 0 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance ISSUE 1 - JUNE 2004 3 ZXM62P02E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge(3) V SD t rr Q rr 22.5 10.4 -0.95 V ns nC T j=25C, I S=-1.6A, V GS=0V T j=25C, I F=-1.6A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 4.1 15.4 12.0 19.2 5.8 1.25 2.8 ns ns ns ns nC nC nC V DS=-16V,V GS=-4.5V, I D =-1.6A (Refer to test circuit) V DD =-10V, I D=-1.6A R G=6.0, R D=6.1 (Refer to test circuit) C iss C oss C rss 320 150 75 pF pF pF V DS=-15 V, V GS=0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 1.5 -0.7 0.2 0.375 -20 -1 100 V A nA V S I D=-250A, V GS=0V V DS=-20V, V GS=0V V GS= 12V, V DS=0V I D =-250A, V DS= V GS V GS=-4.5V, I D=-1.6A V GS=-2.7V, I D=-0.8A V DS=-10V,I D=-0.8A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004 4 ZXM62P02E6 TYPICAL CHARACTERISTICS 100 +25C 100 +150C -ID - Drain Current (A) -ID - Drain Current (A) 5V 4.5V -VGS 10 4V 3.5V 3V 2.5V 5V 4.5V 10 -VGS 4V 3.5V 3V 2.5V 2V 1 2V 1 0.1 0.1 1 10 100 0.1 0.1 1 10 100 -VDS - Drain-Source Voltage (V) -VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics VDS=-10V Normalised RDS(on) and VGS(th) 100 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -100 VGS=VDS ID=-250A VGS(th) RDS(on) VGS=-4.5V ID=-1.6A -ID - Drain Current (A) 10 1 T=150C T=25C 0.1 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 200 -VGS - Gate-Source Voltage (V) Tj - Junction Temperature (C) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance ( ) Normalised RDS(on) and VGS(th) v Temperature 100 10 -ISD - Reverse Drain Current (A) 10 1 1 T=150C T=25C VGS=-3V VGS=-5V 0.1 0.1 1 10 100 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage ISSUE 1 - JUNE 2004 5 ZXM62P02E6 TYPICAL CHARACTERISTICS 700 -VGS - Gate-Source Voltage (V) Vgs=0V f=1Mhz 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 ID=-1.6A C - Capacitance (pF) 600 500 400 300 200 100 0 0.1 1 10 100 Ciss Coss Crss VDS=-16V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VDS - Drain Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE 1 - JUNE 2004 6 ZXM62P02E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e L2 E E1 e1 D a DATUM A C A A2 A1 DIM Millimetres Min Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002 A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 0 10 0 10 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JUNE 2004 7 |
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